MOS gated Si:SiGe quantum wells formed by anodic oxidation
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چکیده
We have used electrochemical anodic oxidation to form gate oxides on strained n-channel Si:SiGe quantum wells. The oxides are characterized by current–voltage and capacitance–voltage measurements. Comparison of measured and calculated electron sheet densities in the quantum well, indicates that the oxide growth does not cause degradation of the Si:SiGe material. This is confirmed by low-temperature measurements of the electron mobility and sheet density in the quantum well.
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تاریخ انتشار 1998